High Permittivity Gate Dielectric Materials

Historical Perspectives.- High Mobility Channels.- Non-Volatile Memory.- Hafnium-Based Gate Dielectric Materials.- Lanthanum-Based High-K Gate Dielectric Materials.- Crystalline High-K Gate Dielectric Materials.- High-K Gate Dielectric Processing.- Metal Gate Electrodes.- Flat-Band/Threshold Voltage Control.- Interfaces and Defects.- Electrical Characterization and Parameter Extraction.- Non-Contact Metrology of High-K Gate Dielectrics.- Channel Mobility.- High-K Gate Dielectric Reliability Issues.- Bias Temperature Instability.- Integration Issues.

Samares Kar was born in Kolkata, India in 1942. He received the B.Tech. degree in electrical engineering in 1962 from the Indian Institute of Technology in Kharagpur, India, and the M.S. and Ph.D. degrees in electrical engineering from Lehigh University in Bethlehem, Pennsylvania, USA in 1968 and 1970, respectively.During the period 1963-1965, he worked in West Germany, first as a design engineer with the Hamburger Transformatorenbau in Hamburg, and then as a project engineer with the Continental Elektroindustrie in Rheydt. During the period 1971-1974, he was a member of the scientific staff at the Fraunhofer Institute of Applied Solid State Physics in Freiburg, West Germany. In 1975, he joined the Indian Institute of Technology in Kanpur, where he was a professor of electrical engineering and materials science from 1980 till 2004, an emeritus fellow between 2004 and 2006, and currently is an R & D consultant. In 1979, he was at The Pennsylvania State University, University Park, Pennsylvania as a visiting associate professor of engineering science, and in 1981, he was at Lehigh University, Bethlehem as a visiting professor of electrical engineering. His research interests have included MOS tunnel devices, Si-SiO2 interface states, solar cells, ion-beam induced defects, organic monolayers, high-K gate dielectrics, and MOS/MIS parameter extraction. His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states.Dr. Kar was/is the lead organizer of The First, Second, Third, Fourth, and Fifth International Symposium on High Dielectric Constant Materials held respectively in October 2002 in Salt Lake City, UT, in October 2003 in Orlando, FL, in October 2005 in Los Angeles, CA., in October 2006 in